SCT10N120AG

制造商零件号
SCT10N120AG
制造商
STMicroelectronics
包装/案例
-
数据表
SCT10N120AG
描述
SICFET N-CH 1200V 12A HIP247
库存
35000

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制造商 :
STMicroelectronics
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drain to Source Voltage (Vdss) :
1200 V
Drive Voltage (Max Rds On, Min Rds On) :
20V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds :
290 pF @ 400 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 200°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
150W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
690mOhm @ 6A, 20V
Supplier Device Package :
HiP247™
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
+25V, -10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
数据列表
SCT10N120AG

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