ISC019N04NM5ATMA1
- 制造商零件号
- ISC019N04NM5ATMA1
- 包装/案例
- -
- 描述
- 40V 1.9M OPTIMOS MOSFET SUPERSO8
- 库存
- 35000
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 29A (Ta), 170A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 7V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 3W (Ta), 100W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.9mOhm @ 50A, 10V
- Supplier Device Package :
- PG-TDSON-8 FL
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.4V @ 50µA
- 数据列表
- ISC019N04NM5ATMA1
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