ISC019N04NM5ATMA1

制造商零件号
ISC019N04NM5ATMA1
制造商
Infineon Technologies
包装/案例
-
数据表
ISC019N04NM5ATMA1
描述
40V 1.9M OPTIMOS MOSFET SUPERSO8
库存
35000

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制造商 :
Infineon Technologies
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
29A (Ta), 170A (Tc)
Drain to Source Voltage (Vdss) :
40 V
Drive Voltage (Max Rds On, Min Rds On) :
7V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3900 pF @ 20 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
8-PowerTDFN
Power Dissipation (Max) :
3W (Ta), 100W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.9mOhm @ 50A, 10V
Supplier Device Package :
PG-TDSON-8 FL
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.4V @ 50µA
数据列表
ISC019N04NM5ATMA1

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