- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 280mA (Ta)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 50 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max) :
- 300mW (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 500mA, 10V
- Supplier Device Package :
- SOT-23-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- 数据列表
- NDS7002A
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| NDS7002A-F169 | onsemi | 35,000 | MOSFET N-CH SOT23 |
| NDS7002A_D87Z | onsemi | 35,000 | MOSFET N-CH 60V 280MA SOT-23 |
| NDS7002A_NB9GGTXA | onsemi | 35,000 | MOSFET N-CH 60V 280MA SOT-23 |
| NDS73PT9-16ET TR | Insignis Technology Corporation | 35,000 | IC DRAM 128MBIT PAR 86TSOP II |
| NDS73PT9-16IT | Insignis Technology Corporation | 1,080 | IC DRAM 128MBIT LVTTL 86TSOP II |
| NDS73PT9-16IT TR | Insignis Technology Corporation | 35,000 | IC DRAM 128MBIT PAR 86TSOP II |
| NDS76PT5-16IT TR | Insignis Technology Corporation | 4,804 | IC DRAM 128MBIT PAR 54TSOP II |
| NDS76PT5-20IT TR | Insignis Technology Corporation | 6,190 | IC DRAM 128MBIT PAR 54TSOP II |
