NTB004N10G

制造商零件号
NTB004N10G
制造商
onsemi
包装/案例
-
数据表
NTB004N10G
描述
MOSFET N-CH 100V 201A TO263
库存
35000

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制造商 :
onsemi
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
201A (Ta)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
11900 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
340W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
4.2mOhm @ 100A, 10V
Supplier Device Package :
D²PAK-3 (TO-263-3)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 500µA
数据列表
NTB004N10G

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