SI4401BDY-T1-E3
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- 制造商 :
- Vishay
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 8.7A (Ta)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 55 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max) :
- 1.5W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 10.5A, 10V
- Supplier Device Package :
- 8-SOIC
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- 数据列表
- SI4401BDY-T1-E3
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SI4401BDY-T1-GE3 | Vishay | 35,000 | MOSFET P-CH 40V 8.7A 8SO |
SI4401DDY-T1-GE3 | Vishay | 35,000 | MOSFET P-CH 40V 16.1A 8SO |
SI4401DY-T1-E3 | Vishay | 35,000 | MOSFET P-CH 40V 8.7A 8SO |
SI4401DY-T1-GE3 | Vishay | 35,000 | MOSFET P-CH 40V 8.7A 8SO |
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SI4403BDY-T1-E3 | Vishay | 35,000 | MOSFET P-CH 20V 7.3A 8SO |
SI4403BDY-T1-GE3 | Vishay | 35,000 | MOSFET P-CH 20V 7.3A 8SO |
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SI4408DY-T1-E3 | Vishay | 5,007 | MOSFET N-CH 20V 14A 8SO |
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