FDD2512

制造商 :

Fairchild Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

6.7A (Ta)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

344 pF @ 75 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

42W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

420mOhm @ 2.2A, 10V

Supplier Device Package :

TO-252, (D-Pak)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA