RFD7N10LE

制造商 :

Harris Corporation

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

150 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

360 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

47W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

300mOhm @ 7A, 5V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -8V

Vgs(th) (Max) @ Id :

2V @ 250µA