SP000089223
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 260mA (Ta)
- Drain to Source Voltage (Vdss) :
- 250 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.8V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 104 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation (Max) :
- 1.8W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 12Ohm @ 260mA, 10V
- Supplier Device Package :
- PG-SOT223-4-21
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 130µA
- 数据列表
- SP000089223
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