TK20J60W,S1VE

制造商零件号
TK20J60W,S1VE
制造商
Toshiba Electronic Devices and Storage Corporation
包装/案例
-
数据表
TK20J60W,S1VE
描述
X35 PB-F POWER MOSFET TRANSISTOR
库存
44

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制造商 :
Toshiba Electronic Devices and Storage Corporation
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
20A (Ta)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1680 pF @ 300 V
Mounting Type :
Through Hole
Operating Temperature :
150°C
Package / Case :
TO-3P-3, SC-65-3
Power Dissipation (Max) :
165W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
155mOhm @ 10A, 10V
Supplier Device Package :
TO-3P(N)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.7V @ 1mA
数据列表
TK20J60W,S1VE

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