SIRA18BDP-T1-GE3

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

19A (Ta), 40A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

680 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8

Power Dissipation (Max) :

3.8W (Ta), 17W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

6.83mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -16V

Vgs(th) (Max) @ Id :

2.4V @ 250µA