SPW20N60C3FKSA1
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 20.7A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 114 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 208W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 13.1A, 10V
- Supplier Device Package :
- PG-TO247-3-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- 数据列表
- SPW20N60C3FKSA1
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SPW20N60C3E8177FKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH |
SPW20N60CFDFKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 650V 20.7A TO247-3 |
SPW20N60S5FKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 600V 20A TO247-3 |
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SPW24N60C3FKSA1 | Infineon Technologies | 99 | MOSFET N-CH 650V 24.3A TO247-3 |
SPW24N60CFDFKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 650V 21.7A TO247-3 |
SPW24N60CFDFKSA1 | Infineon Technologies | 35,000 | HIGH POWER_LEGACY |