FDMS001N025DSD

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V, 104nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 13V, 5105pF @ 13V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V

Supplier Device Package :

8-PQFN (5x6)

Vgs(th) (Max) @ Id :

2.5V @ 320µA, 3V @ 1mA