SI4200DY-T1-GE3
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- 制造商 :
- Vishay
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 8A
- Drain to Source Voltage (Vdss) :
- 25V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 415pF @ 13V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power - Max :
- 2.8W
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 7.3A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- 数据列表
- SI4200DY-T1-GE3
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