SI4618DY-T1-GE3
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- 制造商 :
- Vishay
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 8A, 15.2A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1535pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power - Max :
- 1.98W, 4.16W
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 17mOhm @ 8A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- 数据列表
- SI4618DY-T1-GE3
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|---|---|---|---|
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| SI4617-A10-AMR | Skyworks Solutions, Inc. | 35,000 | LOW-POWER, HIGH-PERFORMANCE AM/F |
| SI4617-A10-GM | Skyworks Solutions, Inc. | 35,000 | LOW-POWER, HIGH-PERFORMANCE AM/F |
| SI4617-A10-GMR | Skyworks Solutions, Inc. | 35,000 | LOW-POWER, HIGH-PERFORMANCE AM/F |
| SI4618DY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8-SOIC |
| SI4620DY-T1-E3 | Vishay | 35,000 | MOSFET N-CH 30V 6A/7.5A 8SO |
| SI4620DY-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 30V 6A/7.5A 8SO |
| SI4621DY-T1-E3 | Vishay | 35,000 | MOSFET P-CH 20V 6.2A 8SO |
| SI4622DY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8-SOIC |
| SI4622DY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8-SOIC |
| SI4626ADY-T1-E3 | Vishay | 35,000 | MOSFET N-CH 30V 30A 8SO |
