SI4816DY-T1-E3
- 制造商零件号
- SI4816DY-T1-E3
- 制造商
- Vishay
- 包装/案例
- -
- 数据表
- SI4816DY-T1-E3
- 描述
- MOSFET 2N-CH 30V 5.3A 8-SOIC
- 库存
- 35000
请求报价（RFQ）
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- 公司:
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- 电话:
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- 制造商 :
- Vishay
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A, 7.7A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power - Max :
- 1W, 1.25W
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 6.3A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
- 数据列表
- SI4816DY-T1-E3
制造商相关产品
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|---|---|---|---|
| SI4800,518 | NXP Semiconductors | 35,000 | MOSFET N-CH 30V 9A 8SO |
| SI4800BDY-T1-E3 | Vishay | 339 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800BDY-T1-GE3 | Vishay | 5,000 | MOSFET N-CH 30V 6.5A 8SO |
| SI4804BDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8-SOIC |
| SI4804BDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4804CDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8SO |
| SI4804CDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8SOIC |
| SI4808DY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4808DY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4812BDY-T1-E3 | Vishay | 35,000 | MOSFET N-CH 30V 7.3A 8SO |
| SI4812BDY-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 30V 7.3A 8SO |
| SI4814BDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4814BDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4816BDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.8A 8-SOIC |
| SI4816BDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.8A 8-SOIC |
