SI3850ADV-T1-GE3

制造商零件号
SI3850ADV-T1-GE3
制造商
Vishay
包装/案例
-
数据表
SI3850ADV-T1-GE3
描述
MOSFET N/P-CH 20V 1.4A 6-TSOP
库存
35000

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制造商 :
Vishay
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
Current - Continuous Drain (Id) @ 25°C :
1.4A, 960mA
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel, Common Drain
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Power - Max :
1.08W
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
300mOhm @ 500mA, 4.5V
Supplier Device Package :
6-TSOP
Vgs(th) (Max) @ Id :
1.5V @ 250µA
数据列表
SI3850ADV-T1-GE3

制造商相关产品

目录相关产品

  • EPC
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  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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