RM2003

制造商 :

Rectron USA

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V, 3.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 10V, 325pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power - Max :

800mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V

Supplier Device Package :

SOT-23-6

Vgs(th) (Max) @ Id :

1.2V @ 250µA, 1V @ 250µA