FDMQ8203

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3.4A, 2.6A

Drain to Source Voltage (Vdss) :

100V, 80V

FET Feature :

Logic Level Gate

FET Type :

2 N and 2 P-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

12-WDFN Exposed Pad

Power - Max :

2.5W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

110mOhm @ 3A, 10V

Supplier Device Package :

12-MLP (5x4.5)

Vgs(th) (Max) @ Id :

4V @ 250µA