GE17080CDA3

制造商 :

General Electric

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

765A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

2414nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds :

58000pF @ 900V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 150°C (Tc)

Package / Case :

Module

Power - Max :

2350W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.23mOhm @ 765A, 20V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

4.5V @ 160mA