MSCSM120AM042CT6AG
- 制造商零件号
- MSCSM120AM042CT6AG
- 包装/案例
- -
- 描述
- PM-MOSFET-SIC-SBD~-SP6C
- 库存
- 2
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- 制造商 :
- Microchip Technology
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 495A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N Channel (Phase Leg)
- Gate Charge (Qg) (Max) @ Vgs :
- 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 18.1pF @ 1000V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- Module
- Power - Max :
- 2.031kW (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 5.2mOhm @ 240A, 20V
- Supplier Device Package :
- SP6C
- Vgs(th) (Max) @ Id :
- 2.8V @ 6mA
- 数据列表
- MSCSM120AM042CT6AG
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| MSCSM120AM027CD3AG | Microchip Technology | 1 | PM-MOSFET-SIC-SBD~-D3 |
| MSCSM120AM027CT6AG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SBD~-SP6C |
| MSCSM120AM027D3AG | Microchip Technology | 35,000 | PM-MOSFET-SIC-D3 |
| MSCSM120AM027T6AG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SP6C |
| MSCSM120AM02CT6LIAG | Microchip Technology | 1 | PM-MOSFET-SIC-SBD~-SP6C LI |
| MSCSM120AM02T6LIAG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SP6L1 |
| MSCSM120AM03CT6LIAG | Microchip Technology | 5 | PM-MOSFET-SIC-SBD~-SP6C LI |
| MSCSM120AM03T6LIAG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SP6L1 |
| MSCSM120AM042CD3AG | Microchip Technology | 11 | PM-MOSFET-SIC-SBD~-D3 |
| MSCSM120AM042CT6LIAG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SBD~-SP6C LI |
| MSCSM120AM042D3AG | Microchip Technology | 35,000 | PM-MOSFET-SIC-D3 |
| MSCSM120AM042T6AG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SP6C |
| MSCSM120AM042T6LIAG | Microchip Technology | 35,000 | PM-MOSFET-SIC-SP6L1 |
