FCP11N65

EPC2110

EPC

GANFET 2NCH 120V 3.4A DIE
EPC2104

EPC

GAN TRANS SYMMETRICAL HALF BRIDG
BSM300D12P2E001

ROHM Semiconductor

MOSFET 2N-CH 1200V 300A
SSM6N37FU,LF

Toshiba Electronic Devices and Storage Corporation

MOSFET 2 N-CHANNEL 20V 250MA US6
DMC2700UDM-7

Diodes Incorporated

MOSFET N/P-CH 20V SOT26

部分	制造商	库存	描述
FCP104N60	onsemi	407	MOSFET N-CH 600V 37A TO220-3
FCP104N60F	onsemi	35,000	MOSFET N-CH 600V 37A TO220-3
FCP110N65F	onsemi	35,000	MOSFET N-CH 650V 35A TO220-3
FCP11N60	onsemi	35,000	MOSFET N-CH 600V 11A TO220-3
FCP11N60F	onsemi	35,000	MOSFET N-CH 600V 11A TO220-3
FCP11N60F	onsemi	35,000	POWER FIELD-EFFECT TRANSISTOR, 1
FCP11N60N	onsemi	35,000	MOSFET N-CH 600V 10.8A TO220-3
FCP11N60N-F102	onsemi	35,000	MOSFET N-CH 600V 10.8A TO220F
FCP1206C123G	Cornell Dubilier Electronics	35,000	CAP FILM 0.012UF 2% 16VDC 1206
FCP1206C123G-H1	Cornell Dubilier Electronics	35,000	CAP FILM 0.012UF 2% 16VDC 1206
FCP1206C123J	Cornell Dubilier Electronics	35,000	CAP FILM 0.012UF 5% 16VDC 1206
FCP1206C123J-H1	Cornell Dubilier Electronics	35,000	CAP FILM 0.012UF 5% 16VDC 1206
FCP1206C153G	Cornell Dubilier Electronics	35,000	CAP FILM 0.015UF 2% 16VDC 1206
FCP1206C153G-H1	Cornell Dubilier Electronics	35,000	CAP FILM 0.015UF 2% 16VDC 1206
FCP1206C153J	Cornell Dubilier Electronics	35,000	CAP FILM 0.015UF 5% 16VDC 1206