HUF75307T3ST136
请求报价(RFQ)
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- 制造商 :
- Harris Corporation
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- -
- FET Feature :
- -
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Power - Max :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- -
- Vgs(th) (Max) @ Id :
- -
- 数据列表
- HUF75307T3ST136
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---|---|---|---|
HUF75229P3 | Fairchild Semiconductor | 161,050 | MOSFET N-CH 50V 44A TO220-3 |
HUF75229P3 | onsemi | 35,000 | MOSFET N-CH 50V 44A TO220-3 |
HUF75229P3_NL | Fairchild Semiconductor | 35,000 | N-CHANNEL POWER MOSFET |
HUF75307D3 | Harris Corporation | 8,653 | MOSFET N-CH 55V 15A IPAK |
HUF75307D3 | onsemi | 35,000 | MOSFET N-CH 55V 15A IPAK |
HUF75307D3ST | Harris Corporation | 35,000 | MOSFET N-CH 55V 15A TO252 |
HUF75307D3ST | onsemi | 35,000 | MOSFET N-CH 55V 15A TO252AA |
HUF75307D3ST_NL | Fairchild Semiconductor | 2,597 | N-CHANNEL POWER MOSFET |
HUF75307T3ST | Fairchild Semiconductor | 5,276 | MOSFET N-CH 55V 2.6A SOT223-4 |
HUF75307T3ST | onsemi | 35,000 | MOSFET N-CH 55V 2.6A SOT223-4 |
HUF75309D3 | Harris Corporation | 35,000 | N-CHANNEL POWER MOSFET |
HUF75309D3S | Fairchild Semiconductor | 1,687 | MOSFET N-CH 55V 19A DPAK |
HUF75309D3S | Harris Corporation | 35,000 | MOSFET N-CH 55V 19A DPAK |
HUF75309D3S | onsemi | 35,000 | MOSFET N-CH 55V 19A DPAK |
HUF75309D3ST | onsemi | 35,000 | MOSFET N-CH 55V 19A DPAK |