G170P03S2

制造商 :

Goford Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

-

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1786pF @ 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (Tc)

Power - Max :

1.4W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

25mOhm @ 5A, 4.5V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 250µA