TPS1120DR
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- 制造商 :
- Texas Instruments
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 1.17A
- Drain to Source Voltage (Vdss) :
- 15V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Power - Max :
- 840mW
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 1.5A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- 数据列表
- TPS1120DR
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