PDTC114EE,115

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V

Frequency - Transition :

230 MHz

Mounting Type :

Surface Mount

Package / Case :

SC-75, SOT-416

Power - Max :

150 mW

Product Status :

Obsolete

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

SC-75

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V