TDTC114E,LM
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- 制造商 :
- Toshiba Electronic Devices and Storage Corporation
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单，预偏置
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA, 5V
- Frequency - Transition :
- 250 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 320 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 10 kOhms
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Supplier Device Package :
- SOT-23-3
- Transistor Type :
- NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- 数据列表
- TDTC114E,LM
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| TDTC114Y,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
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| TDTC144E,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
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