BCR108E6327HTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Frequency - Transition :

170 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Not For New Designs

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

PG-SOT23

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V