BC635,112
请求报价（RFQ）
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- 制造商 :
- NXP Semiconductors
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 1 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA, 2V
- Frequency - Transition :
- 180MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Power - Max :
- 830 mW
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-92-3
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- 数据列表
- BC635,112
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| BC635_D26Z | onsemi | 35,000 | TRANS NPN 45V 1A TO92-3 |
| BC635_D27Z | onsemi | 35,000 | TRANS NPN 45V 1A TO92-3 |
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| BC635_L34Z | onsemi | 35,000 | TRANS NPN 45V 1A TO92-3 |
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