PH2369,112

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

200 mA

Current - Collector Cutoff (Max) :

400nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 1V

Frequency - Transition :

500MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

500 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

15 V