BF421,112

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

50 mA

Current - Collector Cutoff (Max) :

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA, 20V

Frequency - Transition :

60MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

830 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

300 V