BF517E6327HTSA1
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 25 mA
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2mA, 1V
- Frequency - Transition :
- 2.5GHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 280 mW
- Product Status :
- Obsolete
- Supplier Device Package :
- PG-SOT23
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- 数据列表
- BF517E6327HTSA1
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