KSD1021GBU
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- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 1 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA, 1V
- Frequency - Transition :
- 130MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Power - Max :
- 350 mW
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-92S
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- 数据列表
- KSD1021GBU
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