MBT35200MT1

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1.5A, 1.5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

625 mW

Product Status :

Active

Supplier Device Package :

6-TSOP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

310mV @ 20mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

35 V