BCW30,215

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Active

Supplier Device Package :

SOT-23

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

32 V