PBSS2515MB,315

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA, 2V

Frequency - Transition :

420MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-101, SOT-883

Power - Max :

250 mW

Product Status :

Active

Supplier Device Package :

DFN1006B-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

25mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

15 V