MMBT123S-7-F

制造商 :

Diodes Incorporated

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA, 1V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

300 mW

Product Status :

Obsolete

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

18 V