2N4912
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- 制造商 :
- NTE Electronics, Inc.
- 产品分类 :
- 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 4 A
- Current - Collector Cutoff (Max) :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -
- Package / Case :
- TO-213AA, TO-66-2
- Power - Max :
- 25 W
- Product Status :
- Active
- Supplier Device Package :
- TO-66 (TO-213AA)
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- 数据列表
- 2N4912
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 2N4900 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4900 | Central Semiconductor | 35,000 | TRANSISTOR |
| 2N4901 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4902 | Microchip Technology | 35,000 | POWER BJT |
| 2N4903 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4904 | Microchip Technology | 35,000 | POWER BJT |
| 2N4905 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4906 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4907 | Microchip Technology | 35,000 | POWER BJT |
| 2N4908 | Microchip Technology | 35,000 | POWER BJT |
| 2N4909 | Microchip Technology | 35,000 | POWER BJT |
| 2N4910 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4911 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N4912 | Microchip Technology | 35,000 | TRANS PNP 80V 4A TO66 |
| 2N4913 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
