2N5077
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- 制造商 :
- General Semiconductor
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 3 A
- Current - Collector Cutoff (Max) :
- 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 500mA, 5V
- Frequency - Transition :
- 40MHz
- Mounting Type :
- Stud Mount
- Operating Temperature :
- -
- Package / Case :
- TO-210AA, TO-59-3, Stud
- Power - Max :
- 40 W
- Product Status :
- Active
- Supplier Device Package :
- TO-59
- Transistor Type :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 250 V
- 数据列表
- 2N5077
制造商相关产品
目录相关产品
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部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
2N5000 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5001 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5002 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5003 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5004 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5005 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5006 | Microchip Technology | 35,000 | POWER BJT |
2N5007 | Microchip Technology | 35,000 | POWER BJT |
2N5008 | Microchip Technology | 35,000 | POWER BJT |
2N5010 | Microsemi | 35,000 | NPN SILICON TRANSISTOR |
2N5010S | Microchip Technology | 35,000 | POWER BJT |
2N5010U4 | Microchip Technology | 35,000 | POWER BJT |
2N5011 | Microsemi | 35,000 | NPN SILICON TRANSISTOR |
2N5011S | Microchip Technology | 35,000 | POWER BJT |
2N5011U4 | Microchip Technology | 35,000 | POWER BJT |