BCV26E6327

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA, 5V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

360 mW

Product Status :

Active

Supplier Device Package :

PG-SOT23

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

1V @ 100µA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30 V