MSB1218A-RT1G
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- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SC-70, SOT-323
- Power - Max :
- 150 mW
- Product Status :
- Active
- Supplier Device Package :
- SC-70-3 (SOT323)
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- 数据列表
- MSB1218A-RT1G
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