TBC857B,LM
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- 制造商 :
- Toshiba Electronic Devices and Storage Corporation
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 150 mA
- Current - Collector Cutoff (Max) :
- 30nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA, 5V
- Frequency - Transition :
- 80MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 320 mW
- Product Status :
- Active
- Supplier Device Package :
- SOT-23-3
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 100mA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- 数据列表
- TBC857B,LM
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