BF240,112

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

25mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

67 @ 1mA, 10V

Frequency - Transition :

150MHz

Gain :

-

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

300mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

40V