- 制造商 :
- Microsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - RF
- Current - Collector (Ic) (Max) :
- 1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 420mA, 5V
- Frequency - Transition :
- 3.7GHz
- Gain :
- 6dB ~ 6.3dB
- Mounting Type :
- Chassis Mount
- Noise Figure (dB Typ @ f) :
- -
- Operating Temperature :
- 200°C (TJ)
- Package / Case :
- 55BT
- Power - Max :
- 9W
- Product Status :
- Obsolete
- Supplier Device Package :
- 55BT
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 22V
- 数据列表
- 23A025
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 23A005 | Microsemi | 35,000 | RF TRANS NPN 22V 4.3GHZ 55BT |
| 23A008 | Microsemi | 35,000 | RF TRANS NPN 22V 3.7GHZ 55BT |
| 23A017 | Microsemi | 35,000 | TRANSISTOR |
| 23A03551-1-01 | Souriau-Sunbank by Eaton | 35,000 | CONDUIT |
| 23A03551-1-02 | Souriau-Sunbank by Eaton | 35,000 | CONDUIT |
| 23A03551-1-03 | Souriau-Sunbank by Eaton | 35,000 | CONDUIT |
| 23A03551-1-04 | Souriau-Sunbank by Eaton | 35,000 | CONDUIT |
| 23A03551-2-03 | Souriau-Sunbank by Eaton | 35,000 | CONDUIT |
| 23A03551-2-04 | Souriau-Sunbank by Eaton | 35,000 | CONDUIT |
