BFR106,215

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA, 9V

Frequency - Transition :

5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3.5dB @ 800MHz

Operating Temperature :

175°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

500mW

Product Status :

Obsolete

Supplier Device Package :

SOT-23 (TO-236AB)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V