HFA3096B96

制造商 :

Harris Corporation

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

65mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 2V, 20 @ 10mA, 2V

Frequency - Transition :

8GHz, 5.5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3.5dB @ 1GHz

Operating Temperature :

150°C (TJ)

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

16-SOIC

Transistor Type :

3 NPN + 2 PNP

Voltage - Collector Emitter Breakdown (Max) :

8V