MMBTH10-7-F
请求报价（RFQ）
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- 制造商 :
- Diodes Incorporated
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - RF
- Current - Collector (Ic) (Max) :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 4mA, 10V
- Frequency - Transition :
- 650MHz
- Gain :
- -
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- -
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 300mW
- Product Status :
- Active
- Supplier Device Package :
- SOT-23-3
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- 数据列表
- MMBTH10-7-F
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| MMBT2222 | Fairchild Semiconductor | 66,980 | TRANS NPN 30V 0.6A SOT23-3 |
| MMBT2222 | onsemi | 35,000 | TRANS NPN 30V 0.6A SOT23-3 |
| MMBT2222A | YANGJIE | 15,000 | SOT-23 NPN 0.3W 0.6A 75V Transis |
| MMBT2222A | MDD | 144,000 | TRANS NPN 40V SOT23 |
