RN1706JE(TE85L,F)

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-553

Power - Max :

100mW

Product Status :

Active

Resistor - Base (R1) :

4.7kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

ESV

Transistor Type :

2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V