NSTB60BDW1T1
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- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列，预偏置
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA, 10V / 120 @ 5mA, 10V
- Frequency - Transition :
- 140MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Power - Max :
- 250mW
- Product Status :
- Obsolete
- Resistor - Base (R1) :
- 22kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- SC-88/SC70-6/SOT-363
- Transistor Type :
- 1 NPN Pre-Biased, 1 PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- 数据列表
- NSTB60BDW1T1
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