IMD23T108
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- 制造商 :
- ROHM Semiconductor
- 产品分类 :
- 晶体管 - 双极 (BJT) - 阵列，预偏置
- Current - Collector (Ic) (Max) :
- 100mA, 500mA
- Current - Collector Cutoff (Max) :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 50mA, 5V, 30 @ 5mA, 5V
- Frequency - Transition :
- 200MHz, 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Power - Max :
- 300mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 1kOhms, 10kOhms
- Resistor - Emitter Base (R2) :
- 10kOhms, 10kOhms
- Supplier Device Package :
- SMT6
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 2.5mA, 300mV @ 10mA, 500µA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- 数据列表
- IMD23T108
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