EMF5XV6T5G
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- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列,预偏置
- Current - Collector (Ic) (Max) :
- 100mA, 500mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA, 10V / 270 @ 10mA, 2V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Power - Max :
- 500mW
- Product Status :
- Last Time Buy
- Resistor - Base (R1) :
- 47kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- SOT-563
- Transistor Type :
- 1 NPN Pre-Biased, 1 PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V, 12V
- 数据列表
- EMF5XV6T5G
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部分 | 制造商 | 库存 | 描述 |
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EMF510 | FLIR Extech | 11 | EMF/ELF METER |
EMF5T2R | ROHM Semiconductor | 13,623 | TRANS NPN PREBIAS/PNP 0.15W EMT6 |
EMF5XV6T1G | onsemi | 35,000 | TRANS PREBIAS 1NPN 1PNP SOT563 |
EMF5XV6T5 | onsemi | 35,000 | TRANS NPN PREBIAS/PNP 0.5W SOT56 |